Product Datasheet Search Results:

TIM1213-4L.pdf4 Pages, 338 KB, Original
TIM1213-4L.pdf4 Pages, 118 KB, Original
TIM1213-4L
Toshiba
FET, Microwave Power GaAs FET Transistor, ID 5.2 A

Product Details Search Results:

Toshiba.co.jp/TIM1213-4L
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"5.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"2-9D1...
1432 Bytes - 11:45:26, 15 March 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
TIM1200ASM45-PSA011.pdf0.561Request
TIM1200ESM45-PSA011.pdf0.541Request