Product Datasheet Search Results:
12 Pages, 280 KB, Original- IRHM4250
- International Rectifier
- 26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
12 Pages, 266 KB, Original- IRHM4250D
- International Rectifier
- 26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 266 KB, Original- IRHM4250DPBF
- International Rectifier
- 26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 280 KB, Original- IRHM4250PBF
- International Rectifier
- 26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
12 Pages, 266 KB, Original- IRHM4250U
- International Rectifier
- 26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 266 KB, Original- IRHM4250UPBF
- International Rectifier
- 26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/IRHM4250
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1494 Bytes - 05:51:22, 21 March 2025
Irf.com/IRHM4250D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1461 Bytes - 05:51:22, 21 March 2025
Irf.com/IRHM4250DPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"...
1532 Bytes - 05:51:22, 21 March 2025
Irf.com/IRHM4250PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technol...
1564 Bytes - 05:51:22, 21 March 2025
Irf.com/IRHM4250U
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1463 Bytes - 05:51:22, 21 March 2025
Irf.com/IRHM4250UPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"...
1529 Bytes - 05:51:22, 21 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TLE4250-2G.pdf | 0.30 | 1 | Request | |
| 194250.pdf | 0.13 | 1 | Request | |
| 574250.pdf | 0.18 | 1 | Request | |
| 1454250.pdf | 0.05 | 1 | Request | |
| 564250.pdf | 0.04 | 1 | Request | |
| 8142509.pdf | 0.16 | 1 | Request | |
| 554250.pdf | 0.18 | 1 | Request | |
| 164250.pdf | 0.09 | 1 | Request | |
| SP-142501.pdf | 0.12 | 1 | Request | |
| SP-142506.pdf | 0.12 | 1 | Request | |
| SP-142507.pdf | 0.12 | 1 | Request | |
| SP-142503.pdf | 0.12 | 1 | Request |
