Product Datasheet Search Results:

IRF821.pdf5 Pages, 158 KB, Scan
IRF821
Fairchild Semiconductor
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF821.pdf4 Pages, 200 KB, Original
IRF821.pdf4 Pages, 200 KB, Original
IRF821
Frederick Components
Power MOSFET Selection Guide
IRF821.pdf2 Pages, 141 KB, Scan
IRF821
Motorola / Freescale Semiconductor
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
IRF821.pdf5 Pages, 165 KB, Scan
IRF821
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A.
IRF821.pdf2 Pages, 127 KB, Scan
IRF821
General Electric
Power Transistor Data Book 1985
IRF821.pdf5 Pages, 176 KB, Scan
IRF821
Harris Semiconductor
Power MOSFET Data Book 1990
IRF821R.pdf5 Pages, 190 KB, Scan
IRF821R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF821.pdf1 Pages, 34 KB, Original
IRF821R.pdf1 Pages, 48 KB, Original
IRF821R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF821.pdf4 Pages, 210 KB, Scan
IRF821
N/a
FET Data Book
IRF821FI.pdf1 Pages, 84 KB, Scan
IRF821FI
N/a
Shortform Datasheet & Cross References Data

Product Details Search Results:

Semelab.co.uk/IRF821
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On R...
1293 Bytes - 00:37:44, 10 November 2024
Various/IRF821R
{"C(iss) Max. (F)":"360p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.3","I(D) Abs. Max.(A) Drain Curr.":"1.6","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"42n","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"8.0","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1295 Bytes - 00:37:44, 10 November 2024

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