Product Datasheet Search Results:

FQB12P20TM_SB82075.pdf11 Pages, 772 KB, Original
FQB12P20TM_SB82075
Fairchild Semiconductor Corporation
11.5 A, 200 V, 0.47 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB

Product Details Search Results:

Fairchildsemi.com/FQB12P20TM_SB82075
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"810 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"46 A","Channel Type":"P-CHANNEL",...
1666 Bytes - 17:51:08, 16 November 2024

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