Product Datasheet Search Results:

BUK9832-55AT/R.pdf13 Pages, 310 KB, Original
BUK9832-55AT/R
Nxp Semiconductors / Philips Semiconductors
TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 12 A; Q<sub>gd</sub> (typ): 11 nC; R<sub>DS(on)</sub>: 29@10V32@5V36@4.5V mOhm; Thermal Resistance: 15 K/W; V<sub>DS</sub>max: 55 V

Product Details Search Results:

Nxp.com/BUK9832-55ATRL
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Tr...
1475 Bytes - 15:19:16, 01 November 2024
Nxp.com/BUK9832-55ATRL13
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Tr...
1487 Bytes - 15:19:16, 01 November 2024

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