Product Datasheet Search Results:
20 Pages, 218 KB, Original- BAS70-06WT/R
- Nxp Semiconductors / Philips Semiconductors
- General-purpose Schottky diodes - C<sub>d</sub> max.: 2@VR=0V pF; Configuration: dual c.a. ; I<sub>F</sub> max: 70 mA; I<sub>FSM</sub> max: 100 A; I<sub>R</sub> max: 0.1@VR=50VA; V<sub>F</sub>max: 750@IF=10mA mV; V<sub>R</sub> max: 70 V
Product Details Search Results:
Semiconductors.philips.com/BAS70-06WT/R
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100m","Package Body Material":"Plastic","Package":"SOT-323","@Temp (°C) (Test Condition)":"25","I(O) Max.(A) Output Current":"70m","@t(w) (s) (Test Condition)":"10m","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"70","I(RM) Max.(A) Reverse Current":"100n","Military":"N","@I(FM) (A) (Test Condition)":"1.0m","V(FM) Max.(V) Forward Voltage":"410m"}...
1001 Bytes - 14:44:19, 14 November 2024
Documentation and Support
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| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
