Product Datasheet Search Results:
21 Pages, 221 KB, Original- BAS40-06WT/R
- Nxp Semiconductors / Philips Semiconductors
- General-purpose Schottky diodes - C<sub>d</sub> max.: 5@VR=0V pF; Configuration: dual c.a. ; I<sub>F</sub> max: 120 mA; I<sub>FSM</sub> max: 200 A; I<sub>R</sub> max: 1@VR=30VA; V<sub>F</sub>max: 500@IF=10mA mV; V<sub>R</sub> max: 40 V
Product Details Search Results:
Nxp.com/BAS40-06WT/R
{"Peak Rep Rev Volt":"40","Avg. Forward Curr (Max)":"0.12","Peak Non-Repetitive Surge Current":"0.2 A","Rectifier Type":"Schottky Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"1","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 150C","Package Type":"SC-70","Peak Non-Repetitive Surge Current (Max)":"0.2","Rev Curr":"10","Configuration":"Dual Common Anode","Pin Count":"3"}...
1274 Bytes - 12:34:54, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
