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2SK3474-01.pdf4 Pages, 103 KB, Original

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Fujielectric.co.jp/2SK3474-01
{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"169 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"132 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transisto...
1497 Bytes - 01:34:07, 17 November 2024

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