2N6656 N-Channel Enhancement MOSFET
From Various
| @(VDS) (V) (Test Condition) | 15 |
| @V(DS) (V) (Test Condition) | 24 |
| Absolute Max. Power Diss. (W) | 25 |
| C(iss) Max. (F) | 50p |
| I(D) Abs. Drain Current (A) | 2.0 |
| I(DSS) Min. (A) | 10u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-3 |
| V(BR)DSS (V) | 35 |
| V(BR)GSS (V) | 15 |
| g(fs) Min. (S) Trans. conduct. | 1.0 |
| r(DS)on Max. (Ohms) | 1.8 |
| t(f) Max. (s) Fall time. | 5.0n |
| t(r) Max. (s) Rise time | 5.0n |
