BCW60DT/R Si NPN Lo-Pwr BJT
From Philips Semiconductors / NXP Semiconductors
| @Freq. (Hz) (Test Condition) | 1.0M |
| @I(B) (A) (Test Condition) | 1.25m |
| @I(C) (A) (Test Condition) | 10m |
| @V(CB) (V) (Test Condition) | 10 |
| @V(CBO) (V) (Test Condition) | 32 |
| @V(CE) (V) (Test Condition) | 5.0 |
| Absolute Max. Power Diss. (W) | 300m |
| C(obo) (Max) (F) | 4.5p |
| I(C) Abs.(A) Collector Current | 100m |
| I(CBO) Max. (A) | 20n |
| Military | N |
| Package | TO-236AA |
| V(BR)CBO (V) | 32 |
| V(BR)CEO (V) | 32 |
| V(CE)sat Max.(V) | .55 |
| f(T) Min. (Hz) Transition Freq | 125M |
| h(FE) Max. Current gain. | 630 |
| h(FE) Min. Static Current Gain | 380 |
