BSZ018NE2LSIXT MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
From Infineon Technologies
Brand | Infineon Technologies |
Configuration | Single Quad Drain Triple Source |
Factory Pack Quantity | 5000 |
Fall Time | 3.4 ns |
Forward Transconductance - Min | 140 S |
Id - Continuous Drain Current | 40 A |
Manufacturer | Infineon |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | SMD/SMT |
Package / Case | TSDSON-8 |
Packaging | Reel |
Part # Aliases | BSZ018NE2LSIATMA1 SP000906032 |
Pd - Power Dissipation | 69 W |
Product Category | MOSFET |
Qg - Gate Charge | 39 nC |
Rds On - Drain-Source Resistance | 1.8 mOhms |
Rise Time | 4.4 ns |
RoHS | Details |
Series | OptiMOS |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 26 ns |
Vds - Drain-Source Breakdown Voltage | 25 V |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V to 2 V |