2SK2690-01
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 7.5Milliohms; ID +/-80A; TO-3P; PD 125W; VGS +/

From Fuji Semiconductor

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions15.5 x 4.5 x 19.5 mm
Forward Diode Voltage1.65 V
Forward Transconductance55 sec
Height19.5 mm
Length15.5 mm
Maximum Continuous Drain Current±80 A
Maximum Drain Source Resistance17 mΩ
Maximum Drain Source Voltage60 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation125 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-3P
Pin Count3
Typical Input Capacitance @ Vds3500 pF @ 25 V
Typical Turn On Delay Time15 ns
Typical TurnOff Delay Time190 ns
Width4.5 mm

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