FQB6N80TM MOSFET N-CH 800V 5.8A D2PAK
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Datasheets | FQB6N80 |
| Drain to Source Voltage (Vdss) | 800V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | FQB6N80TM-ND FQB6N80TMTR |
| PCN Packaging | Tape and Box/Reel Barcode Update 07/Aug/2014 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Tape & Reel (TR) |
| Power - Max | 3.13W |
| Product Photos | TO-263 |
| Product Training Modules | High Voltage Switches for Power Processing |
| Rds On (Max) @ Id, Vgs | 1.95 Ohm @ 2.9A, 10V |
| Series | QFET® |
| Standard Package | 800 |
| Supplier Device Package | TO-263-2 |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
