FF150R12KF2 Dual N-Channel IGBT
From Eupec Power Semiconductors
@I(C) (A) (Test Condition) | 150 |
@V(GE) (Test Condition) | 15 |
Absolute Max. Power Diss. (W) | 1.14k |
C(iee) (Max) (F) | 18n |
I(C) Abs.(A) Collector Current | 150 |
I(CES) Max. (A) | 500u |
I(GES) Max. (A) | 20u |
Package | MODULE-var |
V(BR)CES (V) | 1.2k |
V(BR)GES (V) | 20 |
V(CE)sat Max.(V) | 4.0 |
V(GE)th Max. (V) | 6.0 |
t(f) Max. (s) Fall time. | 200n |
td(on) Max (s) On time delay | 400n |