Product Datasheet Search Results:

GC5515E30.pdf1 Pages, 61 KB, Scan
GC5515E30
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E45.pdf1 Pages, 61 KB, Scan
GC5515E45
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E70.pdf1 Pages, 61 KB, Scan
GC5515E70
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E75.pdf1 Pages, 61 KB, Scan
GC5515E75
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E80.pdf1 Pages, 61 KB, Scan
GC5515E80
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E81.pdf1 Pages, 61 KB, Scan
GC5515E81
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E85.pdf1 Pages, 61 KB, Scan
GC5515E85
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E88.pdf1 Pages, 61 KB, Scan
GC5515E88
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E89.pdf1 Pages, 61 KB, Scan
GC5515E89
Loral
6.0V Vrrm, 550fF Capacitance Varactor Diode
GC5515E.pdf1 Pages, 116 KB, Scan
GC5515E
N/a
Shortform Semicon, Diode, and SCR Datasheets

Product Details Search Results:

Samsung.com/K8C5515EBM-DC1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","O...
1639 Bytes - 19:57:22, 21 December 2024
Samsung.com/K8C5515EBM-DE1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"85 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-25 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","Organi...
1630 Bytes - 19:57:22, 21 December 2024
Samsung.com/K8C5515EBM-FC1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","O...
1628 Bytes - 19:57:22, 21 December 2024
Samsung.com/K8C5515EBM-FE1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"85 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-25 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","Organi...
1621 Bytes - 19:57:22, 21 December 2024
Samsung.com/K8C5515ETM-DC1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","O...
1639 Bytes - 19:57:22, 21 December 2024
Samsung.com/K8C5515ETM-DE1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"85 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-25 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","Organi...
1631 Bytes - 19:57:22, 21 December 2024
Samsung.com/K8C5515ETM-FC1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","O...
1626 Bytes - 19:57:22, 21 December 2024
Samsung.com/K8C5515ETM-FE1F
{"Terminal Pitch":"0.8000 mm","Terminal Form":"BALL","Operating Temperature-Max":"85 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-25 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"2.68E8 deg","Supply Voltage-Max (Vsup)":"1.95 V","Supply Voltage-Min (Vsup)":"1.7 V","Organi...
1619 Bytes - 19:57:22, 21 December 2024
Various/GC5515E
{"Semiconductor Material":"GaAs","Package":"Pill-B","f(co) Min. (Hz) Cut-off freq.":"400G","V(RRM)(V) Rep.Pk.Rev. Voltage":"6.0","Ct{Cj} Nom. (F) Junction Cap.":"550f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"0"}...
664 Bytes - 19:57:22, 21 December 2024
Various/GC5515E30
{"Semiconductor Material":"GaAs","Package":"Pill-C","f(co) Min. (Hz) Cut-off freq.":"400G","V(RRM)(V) Rep.Pk.Rev. Voltage":"6.0","Ct{Cj} Nom. (F) Junction Cap.":"550f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"0"}...
673 Bytes - 19:57:22, 21 December 2024
Various/GC5515E45
{"Semiconductor Material":"GaAs","Package":"Pin","f(co) Min. (Hz) Cut-off freq.":"400G","V(RRM)(V) Rep.Pk.Rev. Voltage":"6.0","Ct{Cj} Nom. (F) Junction Cap.":"550f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"0"}...
671 Bytes - 19:57:22, 21 December 2024
Various/GC5515E70
{"Semiconductor Material":"GaAs","Package":"Pin","f(co) Min. (Hz) Cut-off freq.":"400G","V(RRM)(V) Rep.Pk.Rev. Voltage":"6.0","Ct{Cj} Nom. (F) Junction Cap.":"550f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"0"}...
671 Bytes - 19:57:22, 21 December 2024

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