Product Datasheet Search Results:
- BSC600N25NS3G
- Infineon Technologies Ag
- 25 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSC600N25NS3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP
Product Details Search Results:
Infineon.com/BSC600N25NS3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Tec...
1593 Bytes - 12:39:17, 01 November 2024
Infineon.com/BSC600N25NS3GATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"25(A)","Mounting":"Surface Mount","Rad Hardened":"No","Pin Count":"8","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TDSON EP","Type":"Power MOSFET","Drain-Source On-Res":"0.06(ohm)","Number of Elements":"1","Drain-Source On-Volt":"250(V)"}...
1670 Bytes - 12:39:17, 01 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSC600N25NS3G.pdf | 0.52 | 1 | Request |